Publication list
[88] R. Kondo, H. Zeng, M. Sometani, H. Hirai, H. Watanabe, T. Umeda
“Differences between Polar-Face and Non-Polar Face 4H-SiC /SiO2 Interfaces Revealed by Magnetic Resonance Spectroscopy”
Diffect and Diffusion Forum 434, 99-103 (5 pages) (2024).
[87] A. Kiyoi and T. Umeda
“How does hydrogen transform into shallow donors in silicon?”
Physical Review B 108, 235201 (11 pages) (2023).
[86] M. Sometani, Y. Nishiya, R. Kondo, R. Inohana, H. Zeng, H. Hirai, D. Okamoto, Y. Matsushita, and T. Umeda
“Energy levels of carbon dangling-bond center (PbC center) at 4H-SiC/SiO2 interface”
APL Materials 11, 111119 (5 pages) (2023).
[85] S. Mizushima, T. Umeda
“Electron paramagnetic resonance study of silicon-28 single crystal for realization of the kilogram”
Metrologia 59, 025005 (13 pages) (2022).
[84]T. Umeda, K. Watanabe, H. Hara, H. Sumiya, S. Onoda, A. Uedono, I. Chuprina, P. Siyushev, F. Jelezko, J. Wrachtrup, and J. Isoya
“Negatively charged boron vacancy center in diamond"
Physical Review B 105, 165201 (13 pages) (2022).
[83]Y. Abe, A. Chaen, M. Sometani, S. Harada, Y. Yamazaki, T. Ohshima,T. Umeda
“Electrical detection of T V2a -type silicon vacancy spin defect in 4H-SiC MOSFETs"
Applied Physics Letters 120, 064001 (7 pages) (2022).
[82] E. Higa, M. Sometani, H. Hirai, H. Yano, S. Harada, T. Umeda
“Electrically detected magnetic resonance study on interface defects at nitrided Si-face, a-face, and m-face
4H-SiC/SiO2 interfaces”
Applied Physics Letters 116, 171602 (4 pages) (2020).
[81] C. Shinei, H. Kato, T. Makino, S. Yamasaki, S. Koizumi, T. Umeda
“Nearly degenerate ground state of phosphorus donor in diamond”
Physical Review Materials 4, 024603 (7 pages) (2020).
[80] T. Umeda, Y. Nakano, E. Higa, T. Okuda, T. Kimoto, T. Hosoi, H. Watanabe, M. Sometani, S. Harada
“Electron-spin-resonance and electrically detected-magnetic-resonance characterization on PbC center in various 4HSiC(0001)/SiO2 interfaces”
Journal of Applied Physics 127, 145301 (8 pages) (2020).
[79] T. Umeda, T. Kobayashi, M. Sometani, H. Yano, Y. Matsushita, S. Harada
“Carbon dangling-bond center (carbon Pb center) at 4H-SiC(0001)/SiO2 interface”
Applied Physics Letters 116, 071604 (5 pages) (2020).
[78] T. Umeda, Y. Kagoyama, K. Tomita, Y. Abe, M. Sometani, M. Okamoto, S. Harada, T. Hatakeyama
“Electrically detected-magnetic-resonance identifications of defects at 4H-SiC(000-1)/SiO2 interfaces with wet oxidation”
Applied Physics Letters 115, 151602 (5 pages) (2019).
[77] S. Sato, T. Narahara, Y. Abe, Y. Hijikata, T. Umeda, T. Ohshima
“Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties”
Journal of Applied Physics 126, 083105 (10 pages) (2019).
[76] Y. Kagoyama, M. Okamoto , T. Yamasaki, N. Tajima, J. Nara, T. Ohno, H. Yano, S. Harada, T. Umeda
“Anomalous carbon clusters in 4H-SiC/SiO2 interfaces”
Journal of Applied Physics 125, 065302 (8 pages) (2019).
[75] S. Mizushima, N. Kuramoto, K. Fujii, T. Umeda
“Electron paramagnetic resonance study on 28Si single crystal for the future realization of the Kilogram”
IEEE Transactions on Instrumentation and Measurement 68, 1879-1886 (2019).
[74] T. Umeda, G.-W. Kim, T. Okuda, M. Sometani, T. Kimoto, S. Harada
“Interface carbon defects at 4H-SiC(0001)/SiO2 interfaces studied by electron-spin resonance spectroscopy”
Applied Physics Letters 113, 061605 (5 pages) (2018).
[73] Y. Abe, T. Umeda, M. Okamoto, S. Onoda, M. Haruyama, W. Kada, O. Hanaizumi, R. Kosugi, S. Harada, T. Ohshima
“Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs”
Materials Science Forum 924, 281-284 (2018).
[72] Y. Abe, T. Umeda, M. Okamoto, R. Kosugi, S. Harada, M. Haruyama, W. Kada, O. Hanaizumi, S. Onoda, T. Ohshima
“Single photon sources in 4H-SiC metal-oxide-semiconductor field effect transistors”
Applied Physics Letters 112, 031105 (2018).
[71] T. Umeda, M. Okamoto, H. Yoshioka, G.-W. Kim, S. Ma, R. Arai, T. Makino, T. Ohshima, S. Harada
“Interface defects in C-face 4H-SiC MOSFETs: An electrically detected magnetic resonance study”
ECS Transactions 80, 147-153 (2017).
[70] Y. Kagoyama, M. Okamoto, S. Harada, R. Arai, T. Umeda
“Microscopic difference between dry and wet oxidtions of C-face 4H-SiC MOSFETs studied by electrically detected magnetic resonance”
Materials Science Forum 858, 619-622 (2016).
[69] G.-W. Kim, R. Arai, S.J. Ma, M. Okamoto, H. Yoshioka, S. Harada, T. Makino, T. Ohshima, T. Umeda
“Electrically detected magnetic resonance study on interface defects responsible for threshold-voltage shift in C-face 4H-SiC MOSFETs”
Materials Science Forum 858, 591-594 (2016).
[68] K. Murakami, S. Tanai, T. Okuda, J. Suda, T. Kimoto, T. Umeda
“ESR study on hydrogen passivation of intrinsic defects in p-type and semi-insulating 4H-SiC”
Materials Science Forum 858, 318-321 (2016).
[67] T. Umeda (in Japanese)
“ESR and EDMR (electrically detected ESR) study on nitrided 4H-SiC MOS structures”
OYO BUTURI (Japan Society of Applied Physics) 85, 580-584 (2016).
(Japanese title: .)
[66] T. Umeda (in Japanese)
“シリコンカーバイド（4H-SiC）中の格子欠陥の評価：電子スピン共鳴（ESR）法と、第一原理計算の対応”
第24回格子欠陥フォーラム「パワーデバイス開発のための格子欠陥評価・制御」(日本物理学会 領域10格子欠陥分科, 2014年9月11日-12日), pp. 26-33.
[65] T. Umeda, M. Okamoto, R. Arai, Y. Satoh, R. Kosugi, S. Harada, H. Okumura, T. Makino, T. Ohshima
“C-face interface defects in 4H-SiC MOSFETs studied by electrically detected magnetic resonance”
Materials Science Forum 778-780, 414-417 (2014).
[64] C. Grezes, B. Julsgaard, Y. Kubo, M. Stern, T. Umeda, J. Isoya, H. Sumiya, H. Abe, S. Onoda, T. Ohshima, V. Jacques, J. Esteve, D. Vion, D. Esteve, K. Mulmer, P. Bertet
“gMultimode Storage and Retrieval of Microwave Fields in a Spin Ensemble”
Physical Review X 4, 021049 (9 pages) (2014).
[63] T. Yamamoto, S. Onoda, T. Ohshima, T. Teraji, K. Watanabe, S. Koizumi, T. Umeda, L. P. McGuinness, C. Müller, B. Naydenov, F. Dolde, H. Fedder, J. Honert, M. L. Markham, D. J. Twitchen, J. Wrachtrup, F. Jelezko, J. Isoya
“Isotopic identification of engineered nitrogen-vacancy spin qubits in ultrapure diamond”
Physical Review B 90, 081117(R) (2014).
[62] K. Uejima, T. Umeda
“Microscopic origins of dry-etching damages in silicon large-scaled integrated circuits revealed by electrically detected magnetic resonance”
Applied Physics Letters 104, 082111 (2014).
[61] S. Castelletto, B. C. Johnson, V. Ivady, N. Stavrias, T. Umeda, A. Gali, T. Ohshima
“A silicon carbide room-temperature single-photon source”
Nature Materials 13, 151 (2014).
[60] T. Umeda, M. Okamoto, R. Kosugi, R. Arai, Y. Sato, S. Harada, T. Makino, T. Ohshima
“SiC MOS interface states: difference between Si face and C face”
ECS Transactions 58, 55-60 (2013).
[59] T. Yamamoto, T. Umeda, K. Watanabe, S. Onoda, M. L. Markham, D. J. Twitchen, B. Naydenov, L. P. MacGuinness, T. Teraji, S. Koizumi, F. Dolde, H. Fedder, J. Honnert, J. Wrachtrup, T. Ohshima, F. Jelezko, J. Isoya
“Extending spin coherence times of diamond qubits by high-temperature annealing”
Physical Review B 88, 075206 (2013).
[58] T. Umeda, M. Okamoto, R. Kosugi, R. Arai, Y. Satoh, S. Harada, H. Okumura, T. Makino, T. Ohshima (in Japanese)
“4H-SiC MOS界面の電子スピン共鳴分光評価”
IEICE (The Institute of Electronics, Information and Communication Engineers) Technical Report 113, 101-105 (2013). (ISSN:0913-5685)
(English title: 4H-SiC MOS interface states studied by electron spin resonance spectroscopy.)
[57] T. Umeda (in Japanese)
pp. 60-63, “電子スピン共鳴(ESR)法” “ESR派生技術” 薄膜の評価技術ハンドブック（全620ページ）
(テクノシステム, 2013, ISBN:978-4-924728-67-7, 48000-yen).
[56] N. T. Son, X. T. Trinh, L. S. Lovlie, B. G. Svensson, K. Kawahara, J. Suda, T. Kimoto, T. Umeda, J. Isoya, T. Makino, T. Ohshima, E. Janzen
“Negative-U system of carbon vacancy in 4H-SiC”
Physical Review Letters 109, 187603 (2012).
[55] T. Umeda, R. Kosugi, Y. Sakuma, Y. Satoh, M. Okamoto, S. Harada, T. Ohshima
“SiC MOS interface states: Similarity and dissimilarity from silicon”
ECS Transactions 50, 305-311 (2012).
[54] T. Umeda, R. Kosugi, K. Fukuda, N. Morishita, T. Ohshima, K. Esaki, J. Isoya
“Electrically detected magnetic resonance (EDMR) studies of SiC-SiO2 interfaces”
Materials Science Forum 717-720, 427-432 (2012).
[53] K. D. Jahnke, B. Naydenov, T. Teraji, S. Koizumi, T. Umeda, J. Isoya, F. Jelezko
“Long coherence time of spin qubits in C12 enriched polycrystalline chemical vapor deposition diamond”
Applied Physics Letters 101, 12405 (3 pages) (2012).
[52] Y. Kubo, I. Diniz, C. Grezes, T. Umeda, J. Isoya, H. Sumiya, T. Yamamoto, H. Abe, S. Onoda, T. Ohshima, V. Jacques, A. Dr?au, J.-F. Roch, A. Auffeves, D. Vion, D. Esteve, P. Bertet
“Electron spin resonance detected by a superconducting qubit”
Physical Review B 86, 064514 (6 pages) (2012).
[51] Y. Kubo, C. Grezes, A. Dewes, T. Umeda, J. Isoya, H. Sumiya, N. Morishita, H. Abe, S. Onoda, T. Ohshima, V. Jacques, A. Dreau, J.-F. Roch, I. Diniz, A. Auffeves, D. Vion, D. Esteve, P. Bertet
“Hybrid quantum circuit with a superconducting qubit coupled to a spin ensemble”
Physical Review Letters 107, 220501 (4 pages) (2011).
[50] T. Umeda (in Japanese)
pp. 57-66, “ESR/EDMR測定と界面構造解析” 第40回薄膜・表面物理基礎講座（2011年11月10日）
(応用物理学会薄膜・表面物理分科会、ISBN:978-4-86348-207-4).
[49] R. Kosugi, T. Umeda, Y. Sakuma
“Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interafce trap density”
Applied Physics Letters 99, 182111 (3 pages) (2011).
[48] T. Umeda, K. Esaki, R. Kosugi, K. Fukuda, T. Ohshima, N. Morishita, J. Isoya
“Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance”
Applied Physics Letters 99, 142105 (3 pages) (2011).
[47] T. Umeda, J. Isoya (in Japanese)
pp. 236-245, “電子スピン共鳴(ESR)による点欠陥評価” 半導体SiC技術と応用(第2版) edited by H. Matsunami, N. Ohya, T. Kimoto, T. Nakamura.
(日刊工業新聞社, ISBN:978-4-526-06754-9, 4400-yen).
[46] T. Umeda, K. Esaki, R. Kosugi, K. Fukuda, N. Morishita, T. Ohshima, J. Isoya
“Electrically detected ESR study of interface defects in 4H-SiC metal-oxide-semiconductor field effect transistor”
Materials Science Forum 679-680, 370-373 (2011).
[45] T. Umeda, J. Isoya, T. Ohshima, S. Onoda, N. Morishita, K. Okonogi, S. Shiratake
“Fluorine-vacancy defects in fluorine-implanted silicon studied by electron paramagnetic resonance”
Applied Physics Letters 97, 041911 (3 pages) (2010).
[44] T. Umeda, J. Isoya, N. Morishita, T. Ohshima, E. Janzen, A. Gali
“Dicarbon antisite defects in n-type 4H-SiC”
Physical Review B 79, 115211 (8 pages) (2009).
[43] T. Umeda, N. Morishita, T. Ohshima, H. Itoh, J. Isoya
”Photo-EPR study of vacancy-type Defects in irradiated n-type 4H-SiC”
Materials Science Forum 600-603, 409-412 (2009).
[42] J. Isoya, T. Umeda, N. Mizuochi, N.T. Son, E. Janzen, T. Ohshima
“EPR identification of defects and impurities in SiC: To be decisive”
Materials Science Forum 600-603, 279-284 (2009).
[41] T. Umeda, S. Hagiwara, N. Mizuohci, J. Isoya (mainly in Japanese)
“A pinpoint search system for a specialized research area in physics and engineering
- Defect dat@base for defects in semiconductors and semiconductor devices”
JOHO KANRI (Japan Science and Technology Agency) 51, 653-666 (2008).
(Japanese title: 特定分野の学術論文をピンポイントで抽出し、いかに検索するか？ ～ Defect dat@baseの実践例.)
[40] J. Isoya, T. Umeda, N. Mizuochi, N.T. Son, E. Janzen, T. Ohshima
“EPR identification of intrinsic defects in SiC”
phys. stat. sol. (b) 245, 1298-1314 (2008).
[39] T. Umeda (in Japanese)
“Microscopic mechanism of variable retention time phenomenon in dynamic random access memories”
OYO BUTURI (Japan Society of Applied Physics) 76, 1037-1040 (2007).
(Japanese title: 先端DRAMにおけるデータ保持時間の変動現象のメカニズム ～ 単一点欠陥が引き起こすデバイス劣化現象.)
[38] T. Umeda, J. Isoya, T. Ohshima, N. Morishita, H. Itoh, A. Gali
“Identification of positively charged carbon antisite-vacancy pairs in 4H-SiC”
Physical Review B 75, 245202 (6 pages) (2007).
[37] T. Umeda, N. Morishita, T. Ohshima, H. Itoh, J. Isoya
“Electron paramagnetic resonance study of carbon antisite-vacancy pair in p-type 4H-SiC”
Materials Science Forum 556-557, 453-456 (2007).
[36] P. Carlsson, N.T. Son, T. Umeda, J. Isoya, E. Janzen
“Deep acceptor levels of the carbon vacancy-carbon antisite pairs in 4H-SiC”
Materials Science Forum 556-557, 449-452 (2007).
[35] K. Ohyu, T. Umeda, K. Okonogi, S. Tsukada, M. Hidaka, S. Fujieda, Y. Mochizuki
“Quantitative identification for the physical origin of variable retention time: A vacancy-oxygen complex defect model”
Tech. Dig. Int. Electron Device Meeting, 2006, pp.389-392.
[34] T. Umeda, N.T. Son, J. Isoya, N. Morishita, T. Ohshima, H. Itoh, E. Janzen
“Electron paramagnetic resonance of the HEI4/SI5 center in 4H-SiC”
Materials Science Forum 527-529, 543-546 (2006).
[33] N.T. Son, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, B. Magunsson, A. Ellison, N. Morishita, T. Ohshima, H. Itoh, E. Janzen
“Divacancy model for P6/P7 centers in 4H- and 6H-SiC”
Materials Science Forum 527-529, 527-530 (2006).
[32] A. Gali, M. Bockstdete, N.T. Son, T. Umeda, J. Isoya, E. Janzen
“Divacancy and its identification : Theory”
Materials Science Forum 527-529, 523-526 (2006).
[31] M. Bockstedte, A. Gali, T. Umeda, N.T. Son, J. Isoya, E. Jazen
“Signature of the negative carbon vacancy-antisite complex”
Materials Science Forum 527-529, 539-542 (2006).
[30] J. Isoya, M. Katagiri, T. Umeda, N.T. Son, A. Henry, E. Janzen, T. Ohshima, N. Morishita, H. Itoh
“Shallow phosphorous donors in 3C-, 4H-, and 6H-SiC”
Materials Science Forum 527-529, 593-596 (2006).
[29] T. Umeda, K. Okonogi, K. Ohyu, S. Tsukada, K. Hamada, S. Fujieda, Y. Mochizuki
“Single silicon vacancy-oxygen complex defect and variable retention time phenomenon in dynamic random access memories”
Applied Physics Letters 88, 253504 (2006).
[28] T. Umeda, N. T. Son, J. Isoya, E. Janzen, T. Ohshima, N. Morishita, H. Itoh, A. Gali, M. Bockstdete
“Identification of the carbon antisite-vacancy pair in 4H-SiC”
Physical Review Letters 96, 145501 (2006).
[27] N. T. Son, P. Carlsson, J. ul Hassan, E. Janzen, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, N. Morishita, T. Ohshima, H. Itoh
“Divacancy in 4H-SiC”
Physical Review Letters 96, 055501 (2006).
[26] J. Isoya, M. Katagiri, T. Umeda, S. Koizumi, H. Kanda, N.T. Son, A. Henry, A. Gali, E. Janzen
“Pulsed EPR studies of Phosphorus shallow donors in diamond and SiC”
Physica B 376-377, 358-361 (2006).
[25] N.T. Son, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, B. Magnusson, A. Ellison, N. Morishita, T. Ohshima, H. Itoh, E. Janzen
“Identification of divacancies in 4H-SiC”
Physica B 376-377, 334-337 (2006).
[24] T. Umeda, S. Hagiwara, M. Katagiri, N. Mizuochi, J. Isoya
“A web-based database system for EPR centers in Semiconductors”
Physica B 376-377, 249-252 (2006).
[23] N. T. Son, A. Henry, J. Isoya, M. Katagiri, T. Umeda, A. Gali, E. Janzen
“Eelectron paramagnetic resonance and theoretical studies of shallow phosphorous centers in 3C-, 4H- and 6H-SiC”
Physical Review B 73, 075201 (16 pages) (2006).
[22] N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, T. Umeda, J. Isoya
“Spin multiplicity and charge state of a silicon vacancy (Tv2a) in 4H-SiC determined by pulsed ENDOR”
Physical Review B 72, 235208 (6 pages) (2005).
[21] T. Umeda, Y. Ishitsuka, J. Isoya, N. T. Son, E. Janzen, N. Morishita, T. Ohshima, H. Itoh, A. Gali
“EPR and theoretical studies of negatively charged carbon vacancy in 4H-SiC”
Physical Review B 71, 193202 (4 pages) (2005).
[20] T. Umeda, J. Isoya, N. Morishita, T. Ohshima, T. Kamiya, A. Gali, P. Deak, N. T. Son, E. Janzen
“EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC”
Physical Review B 70, 235212 (6 pages) (2004).
[19] T. Umeda, J. Isoya, N. Morishita, T. Ohshima, T. Kamiya
“EPR identification of two types of carbon vacancies in 4H-SiC”
Physical Review B 69, 121201(R) (2004).
[18] T. Umeda, Y. Ishitsuka, J. Isoya, N. Morishita, T. Ohshima, T. Kamiya,
“EPR and pulsed ENDOR study of EI6 and related defects in 4H-SiC”
Materials Science Forum 457-460, 465-468 (2004).
[17] T. Umeda, A. Toda, Y. Mochizuki
“Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEM”
The European Physical Journal - Applied Physics 27, 13-20 (2004).
[16] T. Umeda, Y. Mochizuki, K. Okonogi, K. Hamada
“Electrically detected magnetic resonance of ion-implantation damage centers in silicon large-scale integrated circuits”
Journal of Applied Physics 94, 7106-7111 (2003).
[15] W. Futako, T. Umeda, M. Nishizawa, T. Yasuda, J. Isoya, S. Yamasaki
“In situ ESR observation of interface dangling bond formation processes during amorphous SiO2 growth on Si”
Journal of Non-crystalline Solids 299-302, 575 (2002).
[14] T. Umeda, Y. Mochizuki, K. Okonogi, K. Hamada
“Defects related to DRAM leakage current studied by electrically detected magnetic resonance”
Physica B 308-310, 1169-1172 (2001).
[13] T. Umeda, M. Nishizawa, T. Yasuda, J. Isoya, S. Yamasaki, K. Tanaka
“Electron spin resonance observation of the Si(111)-(7×7) surface and its oxidation process”
Physical Review Letters 86, 1054-1057 (2001).
[12] T. Umeda, Y. Mochizuki, Y. Miyoshi, Y. Nashimoto
“Charge-trapping defects in cat-CVD silicon nitride films”
Thin Solid Films 395, 266-269 (2001).
[11] T. Umeda, J. Isoya, S. Yamasaki, K. Tanaka
“Microscopic origin of light-induced ESR centers in undoped hydrogenated amorphous silicon”
Physical Review B 62, 15702-15710 (2000).
[10] T. Umeda, S. Yamasaki, M. Nishizawa, T. Yasuda, J. Isoya, K. Tanaka
“In situ electron spin resonance of initial oxidation processes of Si surfaces”
Applied Surface Science 162-163, 299-303 (2000).
[9] T. Umeda, S. Yamasaki, J. Isoya, K. Tanaka,
“Electron spin resonance center of Dangling bonds in undoped a-Si:H”
Physical Review B 59, 4849-4857 (1999).
[8] J.-H. Zhou, K. Ikuda, T. Yasuda, T. Umeda, S. Yamasaki, K. Tanaka
“Control of crystallinity of microcrystalline silicon film grown on insulating glass substrates”
Journal of Non-crystalline Solids 227-230, 857-860 (1998).
[7] T. Umeda, S. Yamasaki, A. Matsuda, J. Isoya, K. Tanaka
“Energy location of light-induced ESR centers in undoped a-Si:H”
Journal of Non-crystalline Solids 227-230, 353-357 (1998).
[6] S. Yamasaki, T. Umeda, J. Isoya, J.H. Zhou, K. Tanaka
“Microscopic nature of localized states in a-Si:H and their role in metastability”
Journal of Non-crystalline Solids 227-230, 332-337 (1998).
[5] S. Yamasaki, T. Umeda, J. Isoya, K. Tanaka
“Existence of surface region with high dangling bond density during a-Si:H film growth”
Journal of Non-crystalline Solids 227-230, 83-87 (1998).
[4] S. Yamasaki, T. Umeda, J. Isoya, K. Tanaka
“Insitu electron-spin- resonance measurements of film growth of hydrogenated amorphous silicon”
Applied Physics Letters 70, 1137-1139 (1997).
[3] T. Umeda, S. Yamasaki, A. Matsuda, J. Isoya, K. Tanaka
“Electronic structure of band-tail electrons in a-Si:H”
Physical Review Letters 77, 4600-4603 (1996).
[2] S. Yamasaki, J.-K. Lee, T. Umeda, J. Isoya, K. Tanaka
“Spatial distribution of phosphorus atoms surrounding spin centers of P-doped hydrogenated amorphous silicon elucidated by pulsed ESR”
Journal of Non-crystalline Solids 198-200, 330-333 (1996).
[1] M. Fujita, T. Umeda, M. Yoshida
“Polymorphism of carbon forms: Polyhedral morphology and electronic structures”
Physical Review B 51, 13778-13780 (1995).
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