Welcome.
Our research group is studying defects and impurities in semiconductor materials and semiconductor devices. They have a great impact on the electrical and optical characteristics (such as ultra-low-power consumption characteristics) of semiconductor materials, and hence they are the key for realizing the best performance of semiconductor devices. We use ESR (Electron Spin Resonance) spectroscopy and related techniques to characterize such defects of interest. In particular, our EDMR (electrically detected ESR) spectroscopy enables us to study defects in micro-devices such as sub-0.1-micrometer silicon transistors, which actually has contributed to the development of ultra-low-power silicon memories. Kindly find many examples in our publication list.
・JSPS postdoctoral fellowships:
http://www.jsps.go.jp/english/e-fellow/fellow.html (application in every May and September).